16 October 1995 GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224981
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
Investigations of the performance of GaAs/AlGaAs quantum well infrared photoconductors (QWIPs) as compared to other types of semiconductor infrared detectors are presented. In comparative studies the HgCdTe photoconductors and photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors are considered. It is assumed that the performance of HgCdTe photodiodes is due to thermal generation governed by the auger mechanism in the base regions. Investigations of the fundamental physical limitations of HgCdTe photodiodes indicate better performance of this type of detector in comparison with QWIPs operated in the range 35 to 77 K. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe is characterized by high optical absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to extrinsic detectors, silicide Schottky barriers and QWIPs. However, the cooling requirements for QWIPs with cutoff wavelengths below 10 micrometer are less stringent in comparison with extrinsic detectors and Schottky barrier devices.
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Antoni Rogalski, Antoni Rogalski, R. Panowicz, R. Panowicz, } "GaAs/AlGaAs quantum well infrared detectors among the other types of semiconductor infrared detectors", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224981; https://doi.org/10.1117/12.224981
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