Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application

S. Ganschow; Claudio Cavalloni; Peter Reiche; R. Uecker

doi:10.1117/12.224988

16 October 1995 Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application

S. Ganschow, Claudio Cavalloni, Peter Reiche, R. Uecker

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224988
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Single crystals of La₃Ga₅SiO₁₄ were grown from the melt using the Czochralski technique. The mechanism of formation of most peculiar defects in La₃Ga₅SiO₁₄ crystals was studied and the possibility of their suppression by an essential modification of the growth assembly discussed. The piezoelectric behavior of the grown crystals at high temperatures was investigated.

Citation Download Citation

S. Ganschow, Claudio Cavalloni, Peter Reiche, and R. Uecker "Growth of La3Ga5SiO14: a modern material for high-temperature piezoelectric application", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224988

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