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16 October 1995 Mechanism of generation of visible luminescence from porous silicon
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224965
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
Photoluminescence (PL), photoluminescence excitation (PLE), and decay times measurements on anodically etched boron-doped Si are presented. To explain our results we assume a model in which the multi-barrier structure is formed by Si crystal (quantum well) surrounded by Si quantum wires, oriented perpendicular to the sample surface with diameters in the range of 2 to 12 nm (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Bala, Waclaw Bala, Andrzej Kowalczyk, Zbigniew Lukasiak, and Elzbieta Nossarzewska-Orlowska "Mechanism of generation of visible luminescence from porous silicon", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224965
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