Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor

Kazimierz Jerzy Plucinski; S. Michalczuk

doi:10.1117/12.224955

16 October 1995 Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor

Kazimierz Jerzy Plucinski, S. Michalczuk

Author Affiliations +

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224955
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

A simple procedure has been developed by which the doping profile of the semiconductor can be obtained right up to the surface. Contrary to the existing methods no restriction has been made on the shape of the profile.

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Kazimierz Jerzy Plucinski and S. Michalczuk "Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224955

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