16 October 1995 Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224955
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
A simple procedure has been developed by which the doping profile of the semiconductor can be obtained right up to the surface. Contrary to the existing methods no restriction has been made on the shape of the profile.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazimierz Jerzy Plucinski, Kazimierz Jerzy Plucinski, S. Michalczuk, S. Michalczuk, } "Optimization procedure of the determination of semiconductor doping profiles right up to its surface using the MIS capacitor", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224955; https://doi.org/10.1117/12.224955
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