16 October 1995 Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224960
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
The experimental investigation results of different kinds of ionizing radiation's (gamma- quanta, electrons, protons, neutrons, neon ions) influence on the optical, electrophysical, structural properties of gadolinium gallium garnet (GGG) crystals are presented. Some crystal parameters have been obtained using the quantum-chemical calculations. With regard to this result the radiation damage concentrations have been calculated. For most likely defect configurations the defect level energies and optical transition probabilities have been determined by means of Green function method. The mechanisms of radiation-induced transformations and color center models are discussed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrej O. Matkovskii, Andrej O. Matkovskii, D. Y. Sugack, D. Y. Sugack, Sergii B. Ubizskii, Sergii B. Ubizskii, I. V. Kityk, I. V. Kityk, Marian Kuzma, Marian Kuzma, } "Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224960; https://doi.org/10.1117/12.224960
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