16 October 1995 Temperature dependence of visible luminescence from porous silicon
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Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224966
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland
Abstract
This paper presents the results of an investigation of the temperature dependence of photoluminescence (PL) of electrochemically etched crystalline Si wafer. Luminescence spectra of porous silicon layers have been investigated as a function of temperature in the range between 35 K and 350 K. In general PL spectra consist of single broad emission bands with maxima positioned in the energy range from 1.75 eV to 1.95 eV at room temperature and 1.77 eV to 2.2 eV at T equals 40 K. A simple modeling of the PL band shape as a sum of Gaussian components indicates that four or more peaks exist within the response curve. Such analysis suggests that the luminescence in porous silicon arises from quantum confinement of the carriers in the silicon crystallites.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Waclaw Bala, Franciszek Firszt, Arleta Wieckowska, Elzbieta Nossarzewska-Orlowska, Andrzej Brzozowski, "Temperature dependence of visible luminescence from porous silicon", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); doi: 10.1117/12.224966; https://doi.org/10.1117/12.224966
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