Ultrawideband current sensor based on the Faraday effect in semimagnetic semiconductors

N. J. Copner; Meirion F. Lewis; David M. Parkes; Keith Trafford; Robert L.S. Devine; C. J. Whitehead; Alan D.R. Phelps

doi:10.1117/12.205001

3 March 1995 Ultrawideband current sensor based on the Faraday effect in semimagnetic semiconductors

N. J. Copner, Meirion F. Lewis, David M. Parkes, Keith Trafford, Robert L.S. Devine, C. J. Whitehead, Alan D.R. Phelps

Proceedings Volume 2374, Novel Applications of Lasers and Pulsed Power; (1995) https://doi.org/10.1117/12.205001
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Very fast current transients (10 A, 5 GHz) have been measured using the Faraday rotation in CdMnTe sample. RF magnetic fields with an amplitude of < 10 G have been measured, despite the laser intensity noise (at these bandwidths) and the noisy environments. This paper describes a technique whereby the insertion loss is minimized and the effect of the laser intensity noise reduced, enabling these small RF fields to be measured for the first time.

Citation Download Citation

N. J. Copner, Meirion F. Lewis, David M. Parkes, Keith Trafford, Robert L.S. Devine, C. J. Whitehead, and Alan D.R. Phelps "Ultrawideband current sensor based on the Faraday effect in semimagnetic semiconductors", Proc. SPIE 2374, Novel Applications of Lasers and Pulsed Power, (3 March 1995); https://doi.org/10.1117/12.205001

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