26 April 1995 Performance of a GaAlAs laser diode stabilized on a hyperfine component of two-photon transitions in rubidium at 778 nm
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Abstract
The absolute frequency measurement of each hyperfine component of the 5S3/2 and 5S5/2 levels in rubidium was done at ENS more than one year ago using Ti-Sa lasers. We built two devices based on diode lasers to study some metrological properties. We measure the frequency differences between hyperfine components of the 5S5/2 level and we calculate the corresponding hyperfine constants. We also measure the frequency interval between the 5S3/2 and 5S5/2 levels using a Schottky diode. The measured stability in terms of Allan variance is 3*10-13t-1/2 up to 2000 s. The light shift is investigated and the difference between our two systems is 1.7 kHz. The repeatability of one system is better than 10-12 and will allow the absolute frequency measurement at this level via the LPTF frequency synthesis chain.
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Raymond Felder, D. Touahri, Ouali Acef, L. Hilico, Jean-Jacques Zondy, Andre Clairon, Beatrice de Beauvoir, Francois Biraben, Lucile Julien, Francois Nez, Yves P. Millerioux, "Performance of a GaAlAs laser diode stabilized on a hyperfine component of two-photon transitions in rubidium at 778 nm", Proc. SPIE 2378, Laser Frequency Stabilization and Noise Reduction, (26 April 1995); doi: 10.1117/12.208244; https://doi.org/10.1117/12.208244
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