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28 April 1995 Frequency domain measurements for laser diagnostics of microwave transistors
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Abstract
GaAs MESFET dynamic photoresponse under optical illumination by AM light of a laser diode has been investigated both theoretically and experimentally. The possibility of MESFET gain coefficient measurement via laser probing is shown in the frequency range from 100 MHz to 8 GHz.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Garif G. Akchurin and Andrew Yu. Ognishchev "Frequency domain measurements for laser diagnostics of microwave transistors", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208449
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