GaSb-based mid-infrared quantum well diode lasers

Hong K. Choi; George W. Turner

doi:10.1117/12.208452

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28 April 1995 GaSb-based mid-infrared quantum well diode lasers

Hong K. Choi, George W. Turner

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Proceedings Volume 2382, Laser Diodes and Applications; (1995) https://doi.org/10.1117/12.208452
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

The current status of GaInAsSb/AlGaAsSb quantum-well (QW) lasers emitting at approximately 2 micrometers and InAsSb/InAlAsSb QW lasers emitting at approximately 4 micrometers is described. At room temperature, GaInAsSb/AlGaAsSb lasers have exhibited pulsed threshold current density as low as 143 A/cm² and cw power of 1.3 W from a 300- micrometers aperture. Ridge-waveguide lasers have operated cw up to 130 degree(s)C, with a maximum power of 100 mW in a single lobe at 20 degree(s)C. From a tapered laser, diffraction-limited cw power of 200 mW has been obtained. The InAsSb/InAlAsSb QW broad- stripe lasers have operated pulsed up to 165 K, with a characteristic temperature of 30 K up to 120 K. At 80 K, cw power up to 30 mW/facet has been obtained. Ridge-waveguide lasers have exhibited cw threshold current of 35 mA at 80 K, and operated cw up to 128 K.

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Hong K. Choi and George W. Turner "GaSb-based mid-infrared quantum well diode lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); https://doi.org/10.1117/12.208452

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