28 April 1995 High-power diode-pumped mid-infrared semiconductor lasers
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Abstract
A number of double heterostructure and quantum well lasers with wavelengths approximately 3.1, 3.2, 3.4, 3.85 - 4.1, and 4.5 micrometers have been realized in InAsSb/GaSb and HgCdTe/CdZnTe material systems. Peak powers at the few W level and average power at the few hundred mW-level were obtained from optically pumped broad-area lasers at >= 80 K. Threshold, efficiency, internal loss, and gain saturation studies are reported. A compact laser package was built, using a high-power diode array for pumping and a Stirling pump for cooling. Its performance with a 4-micrometers laser is described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Han Q. Le, George W. Turner, Hong K. Choi, Juan R. Ochoa, Antonio Sanchez, Jose M. Arias, Majid Zandian, Ricardo R. Zucca, Yet Zen Liu, "High-power diode-pumped mid-infrared semiconductor lasers", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208454; https://doi.org/10.1117/12.208454
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