28 April 1995 InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing
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Abstract
Many simple molecules, such as H2O, CO2, CO, N2O, CH4, and HCN, have strong absorption bands at wavelengths between 2 and 3.5 micrometers . We are developing InGaAsSb/AlGaAsSb multi-quantum-well diode lasers operating from 2 to 3.5 micrometers as sources for trace-gas monitors. These devices are grown by molecular beam epitaxy, and they generally comprise four or five InGaAsSb quantum wells separated by AlGaAsSb barriers. The cladding layers are high-Al-content AlGaAsSb layers. Our longest-wavelength, room- temperature (20 degree(s)C) lasers operate at 2.78 micrometers in the pulsed mode, delivering 95 mW peak power. The highest temperature for pulsed-mode operation is 60 degree(s)C, at which the wavelength is 2.9 micrometers . Between 78 and 200 K they operate cw, and at 200 K the output is 3 mW at 2.66 micrometers in a dominant single mode. We discuss the properties of these lasers along with some initial applications to water-vapor detection.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ramon U. Martinelli, Ramon U. Martinelli, Dmitri Z. Garbuzov, Dmitri Z. Garbuzov, Hao Lee, Hao Lee, Pamela K. York, Pamela K. York, Raymond J. Menna, Raymond J. Menna, John C. Connolly, John C. Connolly, S. Yegna Narayan, S. Yegna Narayan, "InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208459; https://doi.org/10.1117/12.208459
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