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28 April 1995 Single-mode distributed-feedback GaAs/AlGaAs quantum well lasers for laser absorption spectroscopy
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Laser absorption spectroscopy using III-V semiconductor laser diodes has several advantages for gas sensing applications, as compared with traditional methods employing tunable dye laser and II-VI (e.g., lead salt) laser sources. These advantages include room-temperature operation, reduced cost, and compact size. Limited coverage of spectroscopy wavelengths by high-performance III-V lasers has prevented their widespread application to gas sensing. At those fixed wavelengths, performance of commercially available devices has been limited by multimode emission and/or inadequate wavelength tuning and mode hops. These spectra can, however, be greatly improved by incorporating frequency-selective structures. We have developed single-mode distributed-feedback (DFB) GaAs/AlGaAs quantum well lasers applicable to laser spectroscopy of molecules absorbing in the wavelength interval from 760 to 840 nm. These devices exhibit low threshold current (< 20 mA), high efficiency (> 40%), high output power (> 25 mW), and narrow linewidth (< 3.0 MHz). The lasers display smooth, continuous, single-mode wavelength tuning over 5 nm. Typical temperature and current wavelength-tuning coefficients are 0.065 nm/ degree(s)C and 0.0075 nm/mA (approximately -3.5 GHz/mA), respectively. In preliminary tests, they have been applied to the detection of H2O vapor and O2 gas.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nancy A. Morris, John C. Connolly, Ramon U. Martinelli, Joseph H. Abeles, David E. Cooper, Clinton B. Carlisle, Haris Riris, and Anthony L. Cook "Single-mode distributed-feedback GaAs/AlGaAs quantum well lasers for laser absorption spectroscopy", Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995);

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