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12 May 1995 Single-crystal silicon beams formed by merged epitaxial lateral overgrowth (MELO) for optical reflectors
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Single crystalline silicon has very well known and predictable mechanical, optical, and electrical properties and is easily manufactured with consistent results. It is also integrated circuit compatible and leads to incorporation of circuits and high quality piezoresistors which are available to monitor motion for self-testing. We present for the first time a novel surface micro-machining process using merged epitaxial lateral overgrowth (MELO) silicon to demonstrate the fabrication of single crystal silicon, free standing cantilever beams 1 mm long and 5 micrometers X 10 micrometers in cross section. These beams had no evidence of stress related bending and were free from the substrate, returning to its original position after numerous electrostatic deflections. MELO has also shown great potential for advanced BJT and MOSFET device applications, hence active devices can be incorporated into the deflecting beam arrays. Diodes fabricated in the beams show excellent characteristics with average ideality factors of 1.01. Note that the technology permits adding of single crystal silicon to selected areas, hence it is an additive process as compared to traditional subtractive methods that deposit films over the entire wafer.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerold W. Neudeck and Abul Ehsanul Kabir "Single-crystal silicon beams formed by merged epitaxial lateral overgrowth (MELO) for optical reflectors", Proc. SPIE 2383, Micro-Optics/Micromechanics and Laser Scanning and Shaping, (12 May 1995);

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