Translator Disclaimer
Paper
30 March 1995 Time-resolved contrast in near-field scanning optical microscopy of semiconductors
Author Affiliations +
Abstract
We demonstrate the ability of near-field scanning optical microscopy (NSOM) technique to detect inhomogeneities of the dynamics of excess carriers in oxidized silicon wafers. NSOM is used to improve the spatial resolution of a standard IR-scattering optical technique, which is carried out in a noncontact fashion. Continuous wave infrared light is used as a detector of the time dependent carrier population produced by a pulsed visible laser. We will show high resolution images of carrier lifetime, and discuss some aspects of the NSOM measurement that differentiate it from its far field counterpart.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andres H. La Rosa, Catherine L. Jahncke, and Hans D. Hallen "Time-resolved contrast in near-field scanning optical microscopy of semiconductors", Proc. SPIE 2384, Scanning Probe Microscopies III, (30 March 1995); https://doi.org/10.1117/12.205917
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top