Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers

Markus Pessa; Jari T. Nappi; Alexander Ovtchinnikov; Pekka Savolainen; Harry M. Asonen

doi:10.1117/12.206883

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24 April 1995 Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers

Markus Pessa, Jari T. Nappi, Alexander Ovtchinnikov, Pekka Savolainen, Harry M. Asonen

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Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206883
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

We review state-of-the-art aluminum-free GaInP-GaInAsP-GaInAs laser diodes which emit at the wavelength of 980 nm. These lasers are intended for pumping light into erbium-doped optical fiber amplifiers. We discuss the preparing of the layer structure, using the gas-source molecular beam epitaxy growth method, the lasing characteristics, fiber coupling efficiency, and reliability issues.

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Markus Pessa, Jari T. Nappi, Alexander Ovtchinnikov, Pekka Savolainen, and Harry M. Asonen "Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206883

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