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24 April 1995 Application of synchrotron radiation to semiconductor surfaces, interfaces, and heterostructures
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Abstract
A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor surface and interface physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as structural properties (e.g. surface reconstruction) by x-ray diffraction, interface structural and dynamical properties (e.g. adsorbate vibrational amplitudes) by the x-ray standing wave technique, and the study of heterostructures by a combination of x-ray diffraction, specular reflectivity, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of novel experiments made possible by the so-called `third generation', high-brilliance synchrotron sources are presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Massimo Altarelli "Application of synchrotron radiation to semiconductor surfaces, interfaces, and heterostructures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206901
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