24 April 1995 Defects and interfaces in low-temperature grown Ge/Si heterostructures
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Initial stages of misfit relaxation process in Ge epitaxial films grown by pulsed laser deposition on (001) Si substrates have been investigated by high-resolution transmission electron microscopy. Special emphasis is placed on conditions leading to a 2D (layer-by-layer) growth mode. The evolution of the dislocation network as a function of film thickness and thermal annealing is controlled by surface undulations and interactions between dislocations. The dislocation interactions leading to rearrangements in a nonequilibrium dislocation network driven by elastic interaction between parallel 60 degree(s) dislocation segments are discussed in detail. Based upon our experimental observations, we propose a model for the formation of stacking faults in heterostructures.
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Serge Oktyabrsky and Jagdish Narayan "Defects and interfaces in low-temperature grown Ge/Si heterostructures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206905; https://doi.org/10.1117/12.206905

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