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24 April 1995 Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction
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First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were observed in the spectral range 3 - 5 micrometers at T equals 77 K with full width at half maximum about 1 - 2 kT. It was established that effect of unusual electroluminescence in isotype type II broken-gap p-p- heterostructure due to indirect (tunnel) radiative recombination of spatial separated 2D- electrons and holes localized in deep adjacent quantum wells at different sides of the interface. Novel tuneable mid-infrared light sources are proposed.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maya P. Mikhailova, Georgy G. Zegrya, Konstantin D. Moiseev, Ivan N. Timchenko, Igor A. Andreev, and Yury P. Yakovlev "Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995);

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