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24 April 1995 Er-doped Si/SiO2 microcavities
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Abstract
The optical characteristics and the recombination dynamics of Er-doped Si/SiO2 planar microcavities are reviewed. We show that the emission characteristics of the optically excited Er3+ ions are significantly changed by microcavity effects. For emission-resonant microcavities, the intensity, spectral characteristics, far-field distribution, and spontaneous lifetime are changed. For absorption-resonant microcavities, the absorption efficiency of the 980 nm excitation is strongly enhanced. The results demonstrate that the employment of microcavities in optical as well as optoelectronic devices provides new possibilities to enhance the properties of photonic and optoelectronic devices.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Fred Schubert and J. M. Poate "Er-doped Si/SiO2 microcavities", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206896
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