24 April 1995 Fabrication of dense optoelectronic device arrays
Author Affiliations +
Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995); doi: 10.1117/12.206873
Event: Photonics West '95, 1995, San Jose, CA, United States
Abstract
The development of complex optoelectronic devices and circuitry, including optoelectronic integrated circuits, vertical cavity surface emitting laser arrays, and light emitting diode (LED) arrays, may be simplified by the separation of the circuitry and epitaxial layers from the substrate. This separation permits access to the back side of the epitaxial film, allowing back side metallization for interconnects and mirrors, as well as improved heat sink attachment. We describe the results of the successful fabrication of 2D arrays comprising 32,768 monolithic LEDs. The individual LEDs are addressed through a multiplexing circuit in which row addressing is provided on the front side of the epitaxy, and column addressing is provided on the back side. The monolithic LED array is dense, consisting of center to center device spacing of 50 micrometers . The epitaxial films were formed by conventional metal organic chemical vapor deposition, with AlGaAs active layers emitting at 650 nm. A separation layer of AlAs is used to facilitate substrate removal. The fabrication process and results will be described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark B. Spitzer, Shambhu K. Shastry, Robert W. McClelland, "Fabrication of dense optoelectronic device arrays", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206873; https://doi.org/10.1117/12.206873
PROCEEDINGS
10 PAGES


SHARE
KEYWORDS
Light emitting diodes

Silicon

Etching

Gallium arsenide

Optoelectronic devices

Crystals

Metalorganic chemical vapor deposition

Back to Top