The development of complex optoelectronic devices and circuitry, including optoelectronic integrated circuits, vertical cavity surface emitting laser arrays, and light emitting diode (LED) arrays, may be simplified by the separation of the circuitry and epitaxial layers from the substrate. This separation permits access to the back side of the epitaxial film, allowing back side metallization for interconnects and mirrors, as well as improved heat sink attachment. We describe the results of the successful fabrication of 2D arrays comprising 32,768 monolithic LEDs. The individual LEDs are addressed through a multiplexing circuit in which row addressing is provided on the front side of the epitaxy, and column addressing is provided on the back side. The monolithic LED array is dense, consisting of center to center device spacing of 50 micrometers . The epitaxial films were formed by conventional metal organic chemical vapor deposition, with AlGaAs active layers emitting at 650 nm. A separation layer of AlAs is used to facilitate substrate removal. The fabrication process and results will be described.