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24 April 1995 High-power flared semiconductor laser amplifiers
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Abstract
A normal incidence tapered laser amplifier is shown to produce more than 4.5 W optical power at 810 nm in a diffraction-limited beam. A new angled-facet tapered laser amplifier has demonstrated as much as 5 W optical power in a diffraction-limited beam at 810 nm with only a few mWs of coupled input power. Angled-facet laser amplifiers exhibit near-ideal Gaussian beam characteristics. More than 1.9 W CW is obtained in a 970 nm angled-facet tapered laser amplifier. A near-ideal beam quality factor M2 is obtained.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mario Dagenais, Si Hyung Cho, Ping-Hui S. Yeh, Stephen H. Fox, R. Prakasam, Peter J.S. Heim, Scott A. Merritt, C.-C. Lu, Vijayanand Vusirikala, Badri Prasad Gopalan, Suryaprasad Kareenahalli, and Colin E. C. Wood "High-power flared semiconductor laser amplifiers", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206910
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