24 April 1995 Light-induced effects on low-frequency drain conductance and transconductance in GaAs MESFETs
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Light induced effects on low frequency measurement of small signal driven conductance and transconductance of GaAs MESFET's have been studied. Two versions of a 1 micrometers gate length MESFET fabricated in our laboratory were evaluated; one with ion implanted channel formed in GaAs buffer layer, the other with MOCVD epitaxial doped layer deposited on an undoped GaAs buffer layer. The values of small signal equivalent circuits elements were measured in the linear and saturated regions of I-V characteristics at frequencies from 10 Hz to 150 kHz. Optical excitation during the measurements was provided by red and IR LED's. The epitaxial channel structures showed to have small drain conductance and transconductance frequency dependence. The small signal parameters values were influenced by illumination in the whole measurement frequency range. The implanted channel structures demonstrated, in addition to a large frequency dispersion, a `resonance-like' peak at the transition frequency of 400 Hz to 600 Hz. This phenomenon was related to the dominant deep trap level (Ea equals 0.360 eV) located at the substrate--channel interface, which was found by temperature measurements.
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Boguslaw Boratynski, Boguslaw Boratynski, Bogdan Paszkiewicz, Bogdan Paszkiewicz, Iwona Zborowska-Lindert, Iwona Zborowska-Lindert, Miroslaw Szreter, Miroslaw Szreter, } "Light-induced effects on low-frequency drain conductance and transconductance in GaAs MESFETs", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206918; https://doi.org/10.1117/12.206918

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