Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates

Patrick Kung; Xiaolong Zhang; Erwan Bigan; Manijeh Razeghi; Adam W. Saxler

doi:10.1117/12.206881

24 April 1995 Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates

Patrick Kung, Xiaolong Zhang, Erwan Bigan, Manijeh Razeghi, Adam W. Saxler

Author Affiliations +

Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995) https://doi.org/10.1117/12.206881
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

High quality AlN and GaN epilayers have been grown on basal plane sapphire by low pressure metalorganic chemical vapor deposition. The X-ray rocking curve linewidth of the AlN and GaN films were about 100 and 30 arcsecs respectively. Sharp absorption edges were determined at 6.1 and 3.4 eV respectively. Successful donor-bound excitonic luminescence emissions were detected for GaN films grown on sapphire and silicon. Two additional lines at 3.37 and 3.31 eV were observed on GaN on sapphire and assumed to be impurity-related. Doping of GaN layers was achieved with magnesium. Mg-related photoluminescence emissions were successfully detected on as-grown samples, without any post-growth treatment.

Citation Download Citation

Patrick Kung, Xiaolong Zhang, Erwan Bigan, Manijeh Razeghi, and Adam W. Saxler "Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206881

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