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24 April 1995 Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates
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Abstract
High quality AlN and GaN epilayers have been grown on basal plane sapphire by low pressure metalorganic chemical vapor deposition. The X-ray rocking curve linewidth of the AlN and GaN films were about 100 and 30 arcsecs respectively. Sharp absorption edges were determined at 6.1 and 3.4 eV respectively. Successful donor-bound excitonic luminescence emissions were detected for GaN films grown on sapphire and silicon. Two additional lines at 3.37 and 3.31 eV were observed on GaN on sapphire and assumed to be impurity-related. Doping of GaN layers was achieved with magnesium. Mg-related photoluminescence emissions were successfully detected on as-grown samples, without any post-growth treatment.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Kung, Xiaolong Zhang, Erwan Bigan, Manijeh Razeghi, and Adam W. Saxler "Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206881
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