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24 April 1995 Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si
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High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erick J. Michel, R. Peters, Steven Slivken, Christopher Louis Jelen, P. Bove, Jianren Xu, Ian T. Ferguson, and Manijeh Razeghi "Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206888;

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