24 April 1995 Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
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Abstract
We describe the deposition and characterization of single layers, homo-heterojunctions and superlattices of the AlxGa1-xN and InxGa1-xN material systems. Measurements are discussed indicating of 2D electron gas at heterojunction interfaces. Several photonic devices such as UV detectors, quarter wave reflector stacks, light emitting diodes and optically pumped lasing cavities are also described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Asif Khan, Mohamed Asif Khan, Q. Chen, Q. Chen, C. J. Sun, C. J. Sun, Michael S. Shur, Michael S. Shur, M. F. MacMillan, M. F. MacMillan, Robert P. Devaty, Robert P. Devaty, W. J. Choyke, W. J. Choyke, } "Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206878; https://doi.org/10.1117/12.206878
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