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24 April 1995 Overview of OMVPE optoelectronic material growth at the Jet Propulsion Laboratory
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Abstract
Recent advances in the development of high purity starting materials and OMVPE reactor design are quickly making OMVPE technology the technique of choice for the manufacturing of epitaxial material needed for optoelectronic devices. Within the past year, at the Jet Propulsion Laboratory we have used a single state-of-the-art AIXTRON 200/4 OMVPE reactor to produce high quality optoelectronic devices from three different material systems; InGaAsP/InP, AlInAs/InAs and AlGaAs/GaAs. Within the InGaAsP/InP family of materials we have been able to develop a regrowth protocol to preserve first order DFB gratings, with a grating depth of 400 degree(s)a. In addition, we have been able to fabricate InGaAs(P)/InP heterostructures with near monolayer abruptness. However, most important, we have been able to develop a dual flow adjustment scheme that results in lattice matched and wavelength matched InGaAsP layers within six to seven iterations of the growth parameters.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Singletery Jr. "Overview of OMVPE optoelectronic material growth at the Jet Propulsion Laboratory", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); https://doi.org/10.1117/12.206884
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