24 April 1995 Photoreflectance measurement of internal piezoelectric fields in strained In0.2Ga0.8As/GaAs structures grown on polar substrates
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Abstract
Photoreflectance (PR) measurements are performed on specific structures grown by MBE on different substrate orientations: <111>B, <111>B 2 degree(s)off, <111>A and <100>. A strained In0.2Ga0.8As quantum well is grown in the space charge layer of an undoped GaAs layer. On a polar substrate orientation <111>, the strain induced piezoelectric field in the quantum well modifies the field in the space charge layer. PR spectra recorded in such structures exhibit Franz Keldysh oscillations from which we can measure the internal electric field. The piezoelectric field is then deduced from the comparison between two structures differing only by the presence of the strained quantum well. Experimental values range between 110 and 150 kV/cm, and are used to experimentally determine the piezoelectric constant e14 in In0.2Ga0.8As.
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Catherine Bru, P. D. Berger, Y. Baltagi, Taha Benyattou, Gerard Guillot, Xavier Marcadet, Julien Nagle, "Photoreflectance measurement of internal piezoelectric fields in strained In0.2Ga0.8As/GaAs structures grown on polar substrates", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206921; https://doi.org/10.1117/12.206921
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