24 April 1995 Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures
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Experimental set-up has been established by using high resolution monochromator as well as He-Ne and Ar multiline lasers. Epitaxial, undoped and doped (Si and Zn) GaAs and GaAlAs layers as well as heterostructures of GaAs/GaAlAs have been grown in atmospheric pressure vertical MOCVD system. Room temperature photoreflectance (PR) have been applied to characterize layers, heterostructures as well as the multiple quantum wells. The surface and interface related PR have been studied by means of Kramers-Kronig analysis. Decomposition of PR spectrum into the spectra connected with surface region and with the interface has been proposed. Modulus of the complex photoreflectance gives us the critical point energy, whereas the phase of this function can be used for a carrier concentration topography.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Misiewicz, Jan Misiewicz, Krzysztof Jezierski, Krzysztof Jezierski, P. Sitarck, P. Sitarck, P. Markiewicz, P. Markiewicz, Ryszard Korbutowicz, Ryszard Korbutowicz, Marek Panek, Marek Panek, Beata Sciana, Beata Sciana, Marek J. Tlaczala, Marek J. Tlaczala, } "Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206864; https://doi.org/10.1117/12.206864


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