24 April 1995 Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors
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Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995); doi: 10.1117/12.206924
Event: Photonics West '95, 1995, San Jose, CA, United States
Abstract
The aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
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Rodrigo Martins, Elvira Fortunato, "Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206924; https://doi.org/10.1117/12.206924
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KEYWORDS
Diffusion

Electrodes

Electrons

Distortion

Sensors

Thin films

Interfaces

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