24 April 1995 Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability
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Abstract
The introduction into a traditional p.i.n. structure of two defective buffer layers near the p/i and i/n interfaces can improve the device stability and efficiency through an enhancement of the electric field profile at the interfaces and a reduction of the available recombination bulk centers. The defectous layer (`i-layer'), grown at a higher power density, present a high density of the defects and acts as `gettering centers' able to tailor light induced defects under degradation conditions. If the i-layer density of states remains below 1016 eV-1 cm-3 and assuming a Gaussian distribution of defect states, the gettering center distribution will not affect significantly the carrier population but only its spatial distribution. We report here about a device numerical simulation that allows us to analyze the influence of the `i-layer' position, thickness and density of states on the a-Si:H solar cells performances. Results of some systematic simulation rom the ASCA program (Amorphous Solar Cell Analysis), and for different configurations will be presented.
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Alessandro Fantoni, Alessandro Fantoni, Manuela Vieira, Manuela Vieira, Rodrigo Martins, Rodrigo Martins, } "Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206917; https://doi.org/10.1117/12.206917
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