24 April 1995 Use of scanning probe microscopies to study transport in semiconductor heterostructures
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Proceedings Volume 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices; (1995); doi: 10.1117/12.206861
Event: Photonics West '95, 1995, San Jose, CA, United States
Abstract
The use of scanning probe microscopies--such as Scanning Tunneling Microscopy (STM) and Ballistic Electron Emission Microscopy (BEEM) to study carrier transport through semiconductor heterostructures--is reviewed. The ability of BEEM to probe buried structures below the surface can be exploited to study heterostructure band-offsets and resonant tunneling through quantum structures. It will be shown that BEEM can serve as a powerful probe of the spectroscopy of such structures. The implications of such studies for research on quantum dots and the characterization of new optoelectronic materials will be discussed.
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Venkatesh Narayanamurti, "Use of scanning probe microscopies to study transport in semiconductor heterostructures", Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206861; https://doi.org/10.1117/12.206861
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KEYWORDS
Gallium arsenide

Heterojunctions

Scanning tunneling microscopy

Semiconductors

Quantum dots

Indium gallium arsenide

Spectroscopy

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