Translator Disclaimer
10 April 1995 Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers
Author Affiliations +
Abstract
Results will be presented on the variation of threshold current and emission wavelength with temperature of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) lasers, in the range 10 - 90 degree(s)C. The structures were grown by one-step MBE and the circular gratings were defined by electron-beam lithography. Measurements were made pulsed and CW. The characteristic temperature ranged between 18 - 48 K. A wavelength variation with temperature of around 0.1 nm/ degree(s)C was obtained. The results are compared with those of linear, GaAs-based DBR lasers.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael M. Dion, Mahmoud Fallahi, F. Chatenoud, Ian M. Templeton, Andre Delage, and Richard A. Barber "Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers", Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); https://doi.org/10.1117/12.206342
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top