10 April 1995 Recent developments on InGaAs/GaAs circular-grating distributed Bragg reflector lasers
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Proceedings Volume 2398, Circular-Grating Light-Emitting Sources; (1995); doi: 10.1117/12.206339
Event: Photonics West '95, 1995, San Jose, CA, United States
In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in 0.98 micrometers wavelength range. The layer structure consists of InGaAs/GaAs/AlGaAs strained multi-quantum-wells grown by one step epitaxial growth. Circular gratings are defined by electron-beam lithography around the circular gain sections. The effect of various parameters are discussed and the most recent results are presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mahmoud Fallahi, F. Chatenoud, Ian M. Templeton, Michael M. Dion, Zbigniew R. Wasilewski, Margaret Buchanan, Richard A. Barber, "Recent developments on InGaAs/GaAs circular-grating distributed Bragg reflector lasers", Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206339; https://doi.org/10.1117/12.206339

Quantum wells

Laser damage threshold

Continuous wave operation


Reactive ion etching


Pulsed laser operation

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