10 April 1995 Recent developments on InGaAs/GaAs circular-grating distributed Bragg reflector lasers
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Proceedings Volume 2398, Circular-Grating Light-Emitting Sources; (1995); doi: 10.1117/12.206339
Event: Photonics West '95, 1995, San Jose, CA, United States
Abstract
In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in 0.98 micrometers wavelength range. The layer structure consists of InGaAs/GaAs/AlGaAs strained multi-quantum-wells grown by one step epitaxial growth. Circular gratings are defined by electron-beam lithography around the circular gain sections. The effect of various parameters are discussed and the most recent results are presented.
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Mahmoud Fallahi, F. Chatenoud, Ian M. Templeton, Michael M. Dion, Zbigniew R. Wasilewski, Margaret Buchanan, Richard A. Barber, "Recent developments on InGaAs/GaAs circular-grating distributed Bragg reflector lasers", Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206339; https://doi.org/10.1117/12.206339
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KEYWORDS
Quantum wells

Laser damage threshold

Continuous wave operation

Etching

Reactive ion etching

Lithography

Pulsed laser operation

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