10 April 1995 Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications
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An overview and comparison of both the low pressure metal-organic chemical vapor deposition (MOCVD) and the atomic layer epitaxy of InAs/InP strained heterostructures is presented. Control of the As/P interface down to the one monolayer regime allows the realization of quantum dots (QD) on terraced InP substrates by conventional MOCVD. These embedded InAs QD within the binary matrix show strong blue-shifted luminescence, which is indicative of multi-dimensionally confined structures with no significant interface defects. As a preliminary step towards the incorporation of these QDs in optoelectronic device structures, we also summarize the test results of broad area laser diodes fabricated on structures incorporating strained ultra-thin InAs quantum wells in the active region.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Remo A. Masut, Remo A. Masut, C. A. Tran, C. A. Tran, Marc Beaudoin, Marc Beaudoin, Richard Leonelli, Richard Leonelli, } "Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications", Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206337; https://doi.org/10.1117/12.206337

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