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19 June 1995 Filamentation, lateral field instability, and six-wave mixing in semiconductor lasers
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Electromagnetic field inside a broad-area diode laser is considered as a system of counterpropagating waves. A study of the lateral field instability was performed by using a 6- wave mixing theory. It is shown that perturbation waves with the tilted angle (phi) <EQ 1.2 degrees inside the active region, and respectively, with the side lobes of the far-field pattern of less than 4 degrees, have the greatest growth increment. These waves produce lateral intensity modulation with the period 10 divided by 30 micrometers for the 0.85 micrometers lasing wavelength. The appearance of such waves corresponds to the instability threshold of a homogeneous lateral distribution of optical power in a diode laser. The calculation results explain an experimental observation of the chaos in lateral transversal intensity distribution in usual broad-area diode lasers. The theory allows a stability analysis of the homogeneous field distribution in diode lasers of a novel design.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander P. Bogatov "Filamentation, lateral field instability, and six-wave mixing in semiconductor lasers", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995);

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