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19 June 1995 Intensity noise in microcavity semiconductor laser
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Abstract
Dependence of the intensity noise on structure of microcavity laser is theoretically examined, by help of a generalized presentation of the quantum noise in semiconductor lasers where character of multimode operation is taken into account. Key idea reducing the noise is to restrict the field components only to useful modes for the lasing operation. Precise selection of the cavity length is very important for reduction of the noise in microcavity structure.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Yamada and Tatsuya Nakamori "Intensity noise in microcavity semiconductor laser", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212528
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