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19 June 1995 Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials
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Abstract
Long-wavelength vertical-cavity surface-emitting lasers are investigated using electro-thermal, optical, and electronic modeling. The strain-compensated InGaAsP multi-quantum-well active region of the device example is vertically sandwiched between various distributed Bragg reflectors (DBRs). InP/InGaAsP, Si/SiO2, and GaAs/AlAs mirrors are considered as well as novel combinations like SiC/MgO. The model includes nonuniform current injection, distributed heat sources, temperature dependent material properties, and k(DOT)p band structure calculations. Device parameters such as thermal resistance, threshold current, and external quantum efficiency are compared and heating effects are evaluated. Simulated light power versus current characteristics exhibit the typical thermal roll-over in continuous wave operation. The complex influence of the DBR materials is analyzed in detail.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joachim Piprek, Hans Wenzel, Hans-Juergen Wuensche, D. Braun, and Fritz Henneberger "Modeling light versus current characteristics of long-wavelength VCSELs with various DBR materials", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212533
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