Translator Disclaimer
Paper
19 June 1995 Negative differential gain in strained-layer InGaAs quantum well laser diodes
Author Affiliations +
Abstract
Experimental evidences and modeling calculations are given for the existence of negative differential mode gain in ridge-waveguide laser diodes on the base of strained-layer InGaAs/GaAs quantum-well structures. The phenomenon is found to be related to a mode formation in an active 2D waveguide with monotonic increase of the material gain. The mode gain is calculated in single- and double-QW laser structures at various waveguide parameters including variation of the lateral built-in index step.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petr Georgievich Eliseev and Aleksandr E. Drakin "Negative differential gain in strained-layer InGaAs quantum well laser diodes", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212506
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top