19 June 1995 Optical determinations of energy-band dispersion curves in novel compound semiconductor materials
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Abstract
We present magnetoluminescence data which provides a quantitative measure of the energy- band dispersion curves of novel compound semiconductor optoelectronic materials. Data for a n-type strained-layer InGaAs/GaAs (quantum-well width approximately 8 nm) and a n-type 4.5 nm-wide GaAs/AlGaAs lattice-matched single-quantum well are presented. We find that the conduction-bands are almost parabolic, with a mass of about 0.068m0 for the GaAs/AlGaAs structure. The valence-bands are nonparabolic with wave vector dependent in- plane valence-band masses varying from about 0.1m0 at zone center to about 0.3m0 for 20 meV energies.
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Eric D. Jones, Eric D. Jones, "Optical determinations of energy-band dispersion curves in novel compound semiconductor materials", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212525; https://doi.org/10.1117/12.212525
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