19 June 1995 Optically induced ultrafast three-band coherences in semiconductor quantum wells
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Abstract
Intervalence band coherences in semiconductor quantum wells induced by femtosecond light pulses are investigated. Especially, the possibility of creating dark states, known from atomic physics, in semiconductor quantum wells, is discussed. The analysis includes many-body effects due to the Coulomb interaction and bandstructure effects appropriate for GaAs quantum wells.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johan Markus Lindberg, Rolf H. Binder, "Optically induced ultrafast three-band coherences in semiconductor quantum wells", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212522; https://doi.org/10.1117/12.212522
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