19 June 1995 Periodic modulation of the spectral mode gain curve of the InGaAs/GaAs laser due to radiation leakage
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It is shown theoretically and experimentally that the spectral mode gain curve of a 0.98 micron InGaAs/GaAs laser may be periodically modulated with the period of 2-3 nm and the modulation depth up to several cm-1. A distinctive feature of such heterostructure lasers is that a GaAs substrate is transparent for a 0.98 micron laser wavelength. If the cladding layers are not very thick, then radiation may be tunnelled considerably from a waveguide through the cladding layers, and then propagate in the substrate and the cap layer. As a result of radiation reflection from upper and bottom contacts an additional cavity is formed in the direction normal to the layers, and it modulates the spectral mode gain of such lasers. An analytic expression for the mode gain has been obtained for the case of practical interest where the radiation leakage from the waveguide is small. The mode gain calculation results are in a satisfactory agreement with the experimentally measured values. The leakage effect is analyzed from the viewpoint of constructing new types of a laser with a 2D cavity.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander P. Bogatov, Alexander P. Bogatov, Vadim Pavlovich Konyaev, Vadim Pavlovich Konyaev, O. M. Nikitina, O. M. Nikitina, } "Periodic modulation of the spectral mode gain curve of the InGaAs/GaAs laser due to radiation leakage", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212523; https://doi.org/10.1117/12.212523

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