In a free-running broad-area semiconductor laser, complex spatio-temporal patterns are observed in the near-field output intensity as a result of self-focusing, filamentation, and transverse modulational instabilities. In this paper, results from extensive numerical simulations on the basis of the microscopic semiconductor-Maxwell-Bloch model equations are presented and discussed. The physical processes which lead to the formation of the spatio- temporal patterns and which are involved in the mutual interactions between the light field and the active semiconductor medium on microscopic scales manifest themselves, e.g., in the simultaneous relevance of spectral and spatial hole-burning effects in the charge carrier distributions of the broad-area laser. The dynamic behavior and the complexity in space and time are analyzed with methods from nonlinear dynamics by various theoretical tools: transversely dependent cumulants of the bit-number as well as characteristic cross-correlation functions are computed and the transverse generic eigenmodes of the running laser showing individual dynamics are determined.
Ortwin G. Hess, Ortwin G. Hess,
"Spatio-temporal instabilities in semiconductor lasers", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); doi: 10.1117/12.212493; https://doi.org/10.1117/12.212493