5 April 1995 Optical FET receivers for neural network applications
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Abstract
Optical FET detectors were fabricated in both the MOSIS/Vitesse HGaAs3 process and the AT&T field-effect-transistor-self-electro-optic effect device (FET-SEED) process. Typical responsivity is in the order of 1,000 A/W and response time in the order of 10 to 100 microsecond(s) ec at 50 nW optical input power. Such high gain detectors through commercially available industrial foundries are especially useful for optical neural network applications where high density integration requires very good uniformity and power dissipation limits the available optical power. The mechanism of such optical FET detectors are discussed.
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Jiafu Luo, Jiafu Luo, Annette Grot, Annette Grot, Demetri Psaltis, Demetri Psaltis, } "Optical FET receivers for neural network applications", Proc. SPIE 2400, Optoelectronic Interconnects III, (5 April 1995); doi: 10.1117/12.206325; https://doi.org/10.1117/12.206325
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