Optical FET receivers for neural network applications

Jiafu Luo; Annette Grot; Demetri Psaltis

doi:10.1117/12.206325

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5 April 1995 Optical FET receivers for neural network applications

Jiafu Luo, Annette Grot, Demetri Psaltis

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Proceedings Volume 2400, Optoelectronic Interconnects III; (1995) https://doi.org/10.1117/12.206325
Event: Photonics West '95, 1995, San Jose, CA, United States

Abstract

Optical FET detectors were fabricated in both the MOSIS/Vitesse HGaAs₃ process and the AT&T field-effect-transistor-self-electro-optic effect device (FET-SEED) process. Typical responsivity is in the order of 1,000 A/W and response time in the order of 10 to 100 microsecond(s) ec at 50 nW optical input power. Such high gain detectors through commercially available industrial foundries are especially useful for optical neural network applications where high density integration requires very good uniformity and power dissipation limits the available optical power. The mechanism of such optical FET detectors are discussed.

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Jiafu Luo, Annette Grot, and Demetri Psaltis "Optical FET receivers for neural network applications", Proc. SPIE 2400, Optoelectronic Interconnects III, (5 April 1995); https://doi.org/10.1117/12.206325

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