10 April 1995 Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing
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Abstract
The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of CAs and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced CAs related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiang Liu, Qiang Liu, Harry E. Ruda, Harry E. Ruda, Lech Z. Jedral, Lech Z. Jedral, Ivoil P. Koutzarov, Ivoil P. Koutzarov, Chandima D. Edirisinghe, Chandima D. Edirisinghe, } "Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206285; https://doi.org/10.1117/12.206285
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