10 April 1995 Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing
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Abstract
The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of CAs and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced CAs related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.
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Qiang Liu, Harry E. Ruda, Lech Z. Jedral, Ivoil P. Koutzarov, Chandima D. Edirisinghe, "Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206285; https://doi.org/10.1117/12.206285
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