10 April 1995 Fabrication of submicron relief gratings in p-GaAs in the process of maskless holographic wet etching by laser-induced etch rate reduction method
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Abstract
We report the maskless holographic fabrication of submicron relief diffraction gratings with periods 230-500 nm and depth-to-spacing ratio as high as 0.5 on the surface of p- GaAs under visible laser light. The gratings were fabricated in the process of photochemical wet etching by laser-induced etch rate reduction method. The physical mechanism of laser-induced grating formation in p-type semiconductors is considered.
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Alexander I. Khudobenko, Alexander I. Khudobenko, Vladislav Ya. Panchenko, Vladislav Ya. Panchenko, Vladimir N. Seminogov, Vladimir N. Seminogov, } "Fabrication of submicron relief gratings in p-GaAs in the process of maskless holographic wet etching by laser-induced etch rate reduction method", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206266; https://doi.org/10.1117/12.206266
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