This paper reviews the laser processing of II-VI and III-V compound semiconductors for optoelectronic devices. when a laser beam scanning system is combined with MBE or MOCVD apparatus, the resultant growth process is called laser-assisted epitaxy. Laser irradiation of the films has various effects, depending on the growth conditions: doping efficiency, film growth rate, and film composition are affected. Using these effects, laser-assisted epitaxy has been used to make photodetectors, laser diodes, and integrated devices for multiwavelength transmission.
"Laser processing of thin films for optoelectronic devices", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206259; https://doi.org/10.1117/12.206259