10 April 1995 Laser processing of thin films for optoelectronic devices
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This paper reviews the laser processing of II-VI and III-V compound semiconductors for optoelectronic devices. when a laser beam scanning system is combined with MBE or MOCVD apparatus, the resultant growth process is called laser-assisted epitaxy. Laser irradiation of the films has various effects, depending on the growth conditions: doping efficiency, film growth rate, and film composition are affected. Using these effects, laser-assisted epitaxy has been used to make photodetectors, laser diodes, and integrated devices for multiwavelength transmission.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Sugiura, Hideo Sugiura, } "Laser processing of thin films for optoelectronic devices", Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206259; https://doi.org/10.1117/12.206259


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